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product STH60N099DM9 STMicroelectronics-2AG, DM9 MDmesh technology, which is produced by an N-channel MOSFET on. The transistor can be defined as a new generation this module provides high efficiency with low resistance, ultra high opening. Moreover, H2PAK-2 package is presented to the customer and AEC-Q101 automotive certified. Featured with a current capacity STH60N099DM9 54-2AG product, 100 V drain - source voltage. Both the automotive and high-power transistor, which is ideal for successful applications in many areas can be evaluated. You are efficient, durable, flexible, and tansistore STH60N099DM9 your preference if you need a power-2AG you can use aside from the product.
STH60N099DM9 used in power electronics systems-product 2AG, efficient and high-speed switching allows. Which reduces energy losses and ultra-low thermal resistance reduces heat generation by opening the other component is also separated them from doing optimization. As an example, STH60N099DM9-2AG product, when integrated in an electric vehicle, motor control, undertakes the management of the power flow in the circuit. Supporting heavy loads with high current capacity MOSFET, reliable performance even under demanding conditions is Certified Automotive shows. Providing ease of Assembly for H2PAK-2 packages MOSFET, particularly those required in a high power density designs provides great convenience. Therefore, to achieve high performance in power management can be used.
STH60N099DM9-2AG specifications for automotive systems as well as industrial applications with both stands out as a strong option. Maximum drain - source voltage continuous drain current in the MOSFET 100 V Module Level 54 level. STH60N099DM9-2AG, and the opening of the product ensures that the power losses are low 9.9 mΩ resistance level. Module maximum gate - source voltage ±20 V. In general, high-speed switching transistors is designed to provide the load at the level of NC total gate 92. In addition, the transistor 0.83°C/W thermal resistance provides efficient thermal management with low level.
STH60N099DM9-2AG 255 w maximum MOSFET model which supports the distribution of power thanks to the internal diode, the reverse current protection. AEC-Q101 automotive, indicates that meets the standards of certification by the module. Featured STH60N099DM9-2AG also include properties between the design of the package. 10.4x15.5x4.Measuring 6 mm in H2PAK-2 package offered in MOSFET model is suitable for high power applications and can be integrated with many different systems. Moreover, the operating temperature range of -55°C to 175°C can be used in many demanding applications including automotive, because it is at the level. STH60N099DM9-2AG product MDmesh DM9-design tech is similar. Low-capacitance design ensures high efficiency and that, RoHS compliant, because it is lead-free and environmentally friendly.
Efficiency, high power + STH60N099DM9 in many applications that require switching-MOSFET 2AG named the model can be used. The most common uses of the functions appear to work and leading the successful Transistor are:
quality sth60n099dm9 developed with STMicroelectronics-2AG products are budget-friendly price and cost-saving process is similar. Almost everyone STH60N099DM9 characterized in terms of the achievable level-2AG price, suitable for demanding conditions such as the energy efficiency of the module with many features to be supported. With a wide range of applications STH60N099DM9-named product from the online store 2AG Empa Store is easily accessible. STMicroelectronics such as the brand's official representatives of Turkey, located between many electronic Empa electronics, modules, components, kits, and accessories with a rich range of integrated units makes a difference. For this reason, STH60N099DM9-2AG when buying products in the online store, you can browse for your needs. You also compatible and high performance automotive MOSFET through the store if you're looking for Empa STH60N099DM9-2AG product you can create your order to you immediately.
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