KGF75N65KDF-U IGBT Transistor

Kec KGF75N65KDF-U/H IGBT transistor

KGF75N65KDF-U/H products, is the product of an IGBT developed for industrial and automotive applications. Advanced switching technology for high energy efficiency. Product feature durable construction and versatile in various applications with a long-lasting solutions. Channel a model that uses the field stop technology, reliable operation the principle of exhibits. RoHS compliant structure with an eco-friendly model. KGF75N65KDF-U/H, becomes an indispensable part of applications that require high power.

KGF75N65KDF-U/H, what is it?

KEC developed by the company KGF75N65KDF-U/H, IGBT type is a model of a transistor. Low switching loss model, offering energy efficiency during Operation. The transistor channel, which serves as the field stop, high durability and short-circuit draws attention to the strength. High-tech features with the maximum level of industrial efficiency increases. The structure offers the use of quality material for a long time.

KGF75N65KDF-U/H, What does he do?

KGF75N65KDF-U/H, that require high power “PFC” is specifically designed for power factor correction applications. Particularly with the structure that supports efficient energy management invertorize microwave ovens, welding machines, uninterruptible power supplies, converters for general applications such as effective solutions. KGF75N65KDF-U/H devices constitute the basic components of industrial and institutional properties. A transistor which is capable of operating in wide temperature ranges, to ensure the safe operation of the power system supports.Thanks to the efficient performance of the system prolongs the working life.

KGF75N65KDF-U/H What are the technical specifications of the product?

By improving the design of the performance of the devices equipped transistor under different conditions work seamlessly supports. High durability, even in harsh industrial conditions can be safely used. KGF75N65KDF-U/H technical specifications are as follows:

• KGF75N65KDF-U/H, transistor, IGBT type is.
• Collector emitter voltage is 650 volts of power, the gate emitter voltage is 20 volts.
• Collector current, measured in amps 100 amps at 100 degrees to 75, while at 25 degrees.
• ICM pulsed collector current is 225 amps.
• Diode continuous forward current value is 75 amps at 25 degrees. Diode maximum forward current rating 225 Ampere.
• Maximum power consumption at 25 degrees 484, 242 degree 100 watt. Thanks to low energy consumption, it offers a huge advantage to the designers.
• The connection of the transistor maximum temperature of 175 degrees. Can be used at large temperatures the product, which is preferred in many applications.
• The product storage Temperature -55 to +175 degrees range. In this way, can be maintained for a long time.
• High-speed switching feature energy efficiency and provides fast performance.
• Raw capacity with enhanced temperature-resistant behavior exhibits. Thus, it can operate even under harsh conditions.
• Lead-free RoHS compliant is that it works as a transistor.
• Thanks to its compact dimensions, it provides an effective solution in portable applications.

KGF75N65KDF-U/H What are the areas of use?

KGF75N65KDF-U/H in terms of the use of a very versatile model. The product comes in at the beginning of the most widely used field of hybrid and electric vehicles. Power transmission systems are widely preferred in this area. Also the industrial electronic applications point-of-sale systems, corporate projectors, offers ideal solutions in areas such as power supplies. Transistor, power density is dominated by an institutional system that forms the basis of projector and institutional applications. KGF75N65KDF-U/H apart from these, we also run experiments on the prototype and development studies such as the work of the students it is frequently desirable.

KGF75N65KDF-U/H product is affordable?

KGF75N65KDF-U/H, a cost-effective product that meets the industrial requirements in terms of price performance. KGF75N65KDF-U/H specifications, price, order quantity, and can vary depending on factors such as supplier. Projects where strength and durability is needed in both property safe and affordable with come to the fore. Thanks to quality construction for long-lasting use, while providing cost advantages offer the transistor, it also meets the high expectations of performance in the most efficient way.

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