Efficient Power Conversion (EPC) has introduced its new ultra-compact, high-efficiency 50 V GaN FET, EPC2057, developed for emerging high-power USB-C Power Delivery (PD) applications such as consumer electronics, in-vehicle charging solutions, and e-Mobility.
Offered in an area of just 1.8 mm², this 50 V, 8.5 mΩ device provides an ideal solution for compact, high-performance power designs.
Key Features
Ultra-low RDS(on): 8.5 mΩ for high efficiency
Compact footprint: 1.5 mm × 1.2 mm
Fast switching: Enables smaller and lighter power designs
As USB-C PD adoption continues to expand, demand is increasing for smaller, cooler, and more efficient power components. EPC2057 directly addresses this need, offering a superior alternative to traditional silicon-based FETs.
The EPC2057 is available for rapid prototyping and evaluation with the EPC90155 development board, featuring 40 V maximum operating voltage, 10 A output current, and a 2” × 2” (50.8 mm × 50.8 mm) form factor.
Compared to conventional silicon MOSFETs, EPC2057 occupies less space, generates less heat, and delivers higher performance. A MOSFET-to-GaN cross-reference tool is available on the EPC website to support design migration.
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5 kW GaN-Based AC/DC Reference Design from EPC for AI Servers and Data Centers EL SEGUNDO, California — October 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, has announced a high-efficiency, high-power-density 5 kW AC-to-48 V DC GaN reference design developed to meet the demands of AI servers and next-generation data center power architectures.
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